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SSM3K02T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K02T
High Speed Switching Applications
* * * Small package Low on resistance: Ron = 200 m (max) (VGS = 4 V) : Ron = 250 m (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 10 2.5 5.0 1250 150 -55~150 Unit V V A mW C C
Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range
JEDEC JEITA

Note:
Using continuously under heavy loads (e.g. the application of TOSHIBA 2-3S1A high temperature/current/voltage and the significant change in Weight: 0.01 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu pad: 645 mm , t = 10 s) Note 2: The pulse width limited by max channel temperature.
Marking
3
Equivalent Circuit
3
KU
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
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SSM3K02T
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth Yfs RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 10 V, VDS = 0 ID = 1 mA, VGS = 0 VDS = 30 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 1.25 A ID = 1.25 A, VGS = 4 V ID = 1.25 A, VGS = 2.5 V VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDD = 15 V, ID = 0.5 A, VGS = 0~2.5 V, RG = 4.7 (Note) (Note) (Note) Min 30 0.6 2.2 Typ. 140 180 115 24 60 52 80 Max 5 1 1.1 200 250 Unit A V A V S m pF pF pF ns
Note: Pulse test
Switching Time Test Circuit
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 A for this product. For normal switching operation, VGS (ON) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (ON)) Please take this into consideration for using the device.
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SSM3K02T
2.5
ID - VDS
2.5 Common Source Ta = 25C 1.9
10000
ID - VGS
Common Source VDS = 3 V
2
10 4
2.1
1000
Drain current ID (mA)
Drain current ID (A)
100 25C
1.5 1.7 1
10
1
Ta = 100C -25C
0.5
VGS = 1.5 V
0.1
0 0
0.5
1
1.5
2
0.01 0
0.5
1
1.5
2
Drain-Source voltage
VDS (V)
Gate-Source voltage
VGS (V)
RDS (ON) - ID
280 Common Source 240 Ta = 25C 400
RDS (ON) - Ta
Common Source
Drain-Source on resistance RDS (ON) (m)
Drain-Source on resistance RDS (ON) (m)
ID=1.25A 300 VGS = 2.5 V
200 160 120 80 40 0 0.5
VGS = 2.5 V
200 4V
4V
100
1.0
1.5
2.0
2.5
0 -25
0
25
50
75
100
125
150
Drain current ID (A)
Ambient temperature Ta (C)
30
|Yfs| - ID
Common Source VDS = 3 V Ta = 25C
1000
C - VDS
Forward transfer admittance |Yfs| (S)
(pF) Capacitance C
10
300 Ciss
3
100
1
30 Common Source 10 VGS = 0 f = 1 MHz Ta = 25C 0.3 1 3 10
Coss
0.3
Crss
0.1 0.01
0.03
0.1
0.3
1
3
10
3 0.1
30
100
Drain current ID (A)
Drain-Source voltage
VDS (V)
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2007-11-01
SSM3K02T
.
t - ID
500 Common Source 1.5 VDD = 15 V VGS = 0~2.5 V toff RG = 4.7 Ta = 25C 100 tf 50 30 ton t = 10 s
PD - Ta
Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, 2 Cu Pad: 645 mm )
Drain power dissipation PD (W)
1.25
Switching time t (ns)
1
0.75
DC
0.5
0.25
tr 10 0.01 0 0 25 50 75 100 125 150
0.03
0.1
0.3
1
Drain current ID (A)
Ambient temperature Ta (C)
Safe operating area
10 ID max (pulsed) ID max (continuous) 10 ms* 1 ms*
Drain current ID (A)
1 DC operation Ta = 25C 10 s*
0.1
Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, 2 Cu Pad: 645 mm ) *: Single nonrepetitive Pulse Ta = 25C Curves must be derated linearly with increase in temperature.
VDSS max 10 100
0.01 0.1
1
Drain-source voltage
VDS (V)
rth - tw
1000
Transient thermal impedance rth (C /W)
100
10 Single pulse Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, 2 Cu Pad: 645 mm ) 1 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw (s)
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2007-11-01
SSM3K02T
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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